 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transistors 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS General Purpose Transistor (-50V, -0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. External dimensions (Unit : mm) 2SA1037AK (1) 2SA1576A (1) 0.95 0.95 1.9 2.9 0.65 0.65 0.8 0.7 0.4 (3) 0.3 (2) (3) 1.25 1.6 2.8 0.15 0.15 2.1 0.2 (2) Structure Epitaxial planar type. PNP silicon transistor 0.8 1.1 0.3 to 0.6 0 to 0.1 0.1 to 0.4 Each lead has same dimensions Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector 0 to 0.1 ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector Abbreviated symbol : F Abbreviated symbol : F 2SA1774 0.2 (1) (2) 2SA2029 1.2 0.8 (2) (3) (1) 0.5 0.5 1.0 0.3 0.8 1.6 0.15 0.2 1.2 0.32 0.13 0 to 0.1 0.55 0.5 0.1Min. 0 to 0.1 0.7 0.15Max. 0.22 ROHM : EMT3 EIAJ : SC-75A (1) Emitter (2) Base (3) Collecto ROHM : VMT3 EIAJ : Abbreviated symbol : F Abbreviated symbol : F 2SA933AS 4 3 2 (15Min.) 3Min. 0.45 2.5 5 (1) (2) (3) 0.5 0.45 Taping specifications ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base Denotes hFE Rev.A 0.4 0.4 (3) 1.6 0.2 0.2 (1) Base (2) Emitter (3) Collector 0.9 1.3 2.0 1/3 Transistors Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SA1037AK, 2SA1576A 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Symbol VCBO VCEO VEBO IC Limits -60 -50 -6 -0.15 0.2 PC 0.15 0.3 Tj Tstg 150 -55 to +150 C C W Unit V V V A (DC) Collector power dissipation 2SA2029, 2SA1774 2SA933AS Junction temperature Storage temperature Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -60 -50 -6 - - - 120 - - Typ. - - - - - - - 140 4.0 Max. - - - -0.1 -0.1 -0.5 560 - 5.0 Unit V V V A A V - MHz pF IC= -50A IC= -1mA IE= -50A VCB= -60V VEB= -6V IC/IB= -50mA/-5mA VCE= -6V, IC= -1mA VCE= -12V, IE=2mA, f=100MHz VCB= -12V, IE=0A, f=1MHz Conditions Packaging specifications and hFE Package Code Basic ordering unit (pieces) T146 3000 - - - - - - - T106 3000 - - Taping TL 3000 - - - - - - - T2L 8000 TP 5000 - - - - Type 2SA2029 hFE QRS 2SA1037AK QRS 2SA1576A 2SA1774 2SA933AS QRS QRS QRS hFE values are classified as follows: Item hFE Q 120 to 270 R 180 to 390 S 270 to 560 Rev.A 2/3 Transistors Electrical characteristic curves -50 COLLECTOR CURRENT : Ic (mA) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS VCE= -6V COLLECTOR CURRENT : IC (mA) -10 -35.0 Ta=25C -31.5 -28.0 -24.5 -6 -21.0 -17.5 -4 -14.0 -10.5 -2 -7.0 -3.5A 0 -0.4 -0.8 -1.2 -1.6 IB=0 -2.0 -100 COLLECTOR CURRENT : IC (mA) -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 Ta=100C 25C -40C Ta=25C -500 -450 -400 -350 -300 -8 -80 -60 -250 -200 -40 -150 -100 -20 -50A IB=0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0 -1 -2 -3 -4 -5 COLLECTOR TO MITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics (I) Fig.3 Grounded emitter output characteristics (II) Ta=25C VCE= -5V -3V -1V DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 500 Ta=100C 25C 200 -40C -1 Ta=25C DC CURRENT GAIN : hFE -0.5 200 100 -0.2 IC/IB=50 -0.1 20 10 100 50 50 VCE= -6V -5 -10 -20 -50 -100 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) Fig.5 DC current gain vs. collector current (II) Fig.6 Collector-emitter saturation voltage vs. collector current (I) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 -0.5 TRANSITION FREQUENCY : fT (MHz) Ta=25C VCE= -12V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) -1 1000 20 Cib 10 500 Ta=25C f=1MHz IE=0A IC=0A Co b -0.2 Ta=100C 25C -40C 200 5 -0.1 100 2 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 50 0.5 1 2 5 10 20 50 100 -0.5 -1 -2 -5 -10 -20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current (II) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
Price & Availability of 2SA1037AK1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |